Physics based model of an AlGaN/GaN vacuum field effect transistor

Author:

Hernandez N.1ORCID,Cahay M.1ORCID,Ludwick J.23ORCID,Back T.2ORCID,Hall H.4ORCID,O’Mara J.45

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, Ohio 45221

2. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433

3. UES, 2179 12th St, Wright-Patterson Air Force Base, Ohio 45433

4. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio 45433

5. KBR, 4027 Colonel Glenn Hwy Suite 301, Beavercreek, Ohio 45431

Abstract

A vacuum field effect transistor (VacFET) is proposed that consists of a modification of a conventional AlGaN/GaN high electron mobility transistor to include a nanogap near the gate on either the source (cathode) or drain (anode) side of the device. The current flowing through the two-dimensional electron gas (2DEG) under the gate is obtained using a charge-control model, which is forced to be equal to the tunneling current across the nanogap. The latter is modeled using a modified version of Simmons tunneling theory of a metal–insulator–metal junction to include the effect of barrier lowering across the nanogap. When compared to other recently fabricated VacFETs, the proposed device has potential for much higher emission current densities and transconductance levels, of the order of several hundreds of mA/mm and tens of mS/mm, respectively. For similar material parameters and physical dimensions, the proposed VacFET has a turn-on voltage that depends on the location of the nanogap on either the source or drain side of the gate. It is shown that the current–voltage characteristics of VacFETs with a nanogap either on the drain or source side of the gate are highly sensitive to their physical parameters and biasing conditions, making them a very strong candidate for chemical or gas sensing applications. This is due to the sensitivity of the tunneling current to the effective barrier height and field enhancement factor of the nanogap.

Funder

Air Force Office of Scientific Research

Air Force Research Laboratory

Air Force Summer Fellowship Program

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes;Journal of Applied Physics;2024-05-28

2. Exploring the Field Emission Capabilities of ALGAN/GAN Nanoscale Vacuum Diodes;2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC);2023-07-10

3. Physics based model of an AlGaN/GaN vacuum field effect transistor;Journal of Vacuum Science & Technology B;2022-09

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