X‐ray photoelectron study of the reactive ion etching of SixGe1−x alloys in SF6 plasmas-Reference-Cited by-同舟云学术

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X‐ray photoelectron study of the reactive ion etching of SixGe1−x alloys in SF6 plasmas

Published:1996-01 Issue:1 Volume:14 Page:156-164
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Peignon M. C.,Cardinaud Ch.,Turban G.,Charles C.,Boswell R. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579913

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin amorphous Ge film enabling stabilized femtosecond fiber laser pulsation;Optics & Laser Technology;2021-04

2. Thermal atomic layer etching of germanium-rich SiGe using an oxidation and “conversion-etch” mechanism;Journal of Vacuum Science & Technology A;2021-03

3. Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology;Journal of Vacuum Science & Technology A;2019-12

4. Ge-Rich SiGe Mode-Locker for Erbium-Doped Fiber Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2018-05

5. Deep germanium etching using time multiplexed plasma etching;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-11

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