Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

Published:1998-07 Issue:4 Volume:16 Page:2140-2147
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Yasutake K.,Takeuchi A.,Kakiuchi H.,Yoshii K.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581321

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

2. Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors;ACS Photonics;2023-05-10

3. Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template;ACS Applied Optical Materials;2023-03-14

4. Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111);ACS Applied Materials & Interfaces;2022-03-25

5. Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si;Journal of Vacuum Science & Technology B;2020-11

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