Oxidation threshold in silicon etching at cryogenic temperatures-Reference-Cited by-同舟云学术

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Oxidation threshold in silicon etching at cryogenic temperatures

Published:2006-07 Issue:4 Volume:24 Page:1073-1082
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Tillocher T.,Dussart R.,Mellhaoui X.,Lefaucheux P.,Maaza N. Mekkakia,Ranson P.,Boufnichel M.,Overzet L. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2210946

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