Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

Published:2015-05 Issue:3 Volume:33 Page:031212
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Hwang Ya-Hsi,Ahn Shihyun,Dong Chen,Zhu Weidi,Kim Byung-Jae,Le Lingcong,Ren Fan,Lind Aaron G.,Dahl James,Jones Kevin S.,Pearton Stephen J.,Kravchenko Ivan I.,Zhang Ming-Lan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4919237

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