Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides
Author:
Affiliation:
1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504
2. School of Molecular Sciences, Arizona State University, Tempe, Arizona 85287-1604
Funder
Air Force Office of Scientific Research
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/am-pdf/10.1116/6.0001253
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics;Journal of Applied Physics;2024-03-22
2. Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions;Semiconductor Science and Technology;2023-12-20
3. Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge;Materials Science in Semiconductor Processing;2023-09
4. Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications;Journal of Vacuum Science & Technology A;2022-12
5. Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH3Cl;Journal of Materials Chemistry C;2022
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