Metal gate HfO[sub 2] metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition-Reference-Cited by-同舟云学术

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Metal gate HfO[sub 2] metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition

Published:2007 Issue:4 Volume:25 Page:1491
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ok InJo,Kim H.,Zhang M.,Zhu F.,Park S.,Yum J.,Koveshnikov S.,Tsai W.,Tokranov V.,Yakimov M.,Oktyabrsky S.,Lee Jack C.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12

2. High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces;Microelectronic Engineering;2015-11

3. Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric;IEEE Transactions on Electron Devices;2015-04

4. Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric;Applied Physics Letters;2015-03-23

5. Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations;Japanese Journal of Applied Physics;2014-11-21

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