Electronic properties of HgCdTe-Reference-Cited by-同舟云学术

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Electronic properties of HgCdTe

Published:1982-05 Issue:1 Volume:21 Page:215-219
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Kinch M. A.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571719

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wavelength extended InGaAsBi near infrared photodetector;J INFRARED MILLIM W;2023

2. Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors;Semiconductor Science and Technology;2022-10-13

3. Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector;Physica Scripta;2020-12-29

4. Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes;Semiconductor Science and Technology;2017-04-04

5. Super high sensitive low-dimensional IR-detector;physica status solidi (c);2013-05-06

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