Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation-Reference-Cited by-同舟云学术

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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

Published:2004-11 Issue:6 Volume:22 Page:2411-2418
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Bae Choelhwyi,Lucovsky Gerald

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1807411

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet etching of α-Ga₂O₃ epitaxy film using a HCl-based solution;J KOR CRYST GROWTH C;2022

2. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma;Japanese Journal of Applied Physics;2018-05-16

3. Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties;Japanese Journal of Applied Physics;2018-05-09

4. Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics;Applied Physics Letters;2017-11-20

5. In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge;Applied Physics Letters;2014-06-30

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