Effects of oxygen-flow rate on the characteristics of the ZrO[sub 2] dielectric layers grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects of oxygen-flow rate on the characteristics of the ZrO[sub 2] dielectric layers grown by metalorganic molecular beam epitaxy

Published:2003 Issue:5 Volume:21 Page:2105
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hong Jang-Hyuk,Choi Woo-Jong,Kim Doo-Soo,Myoung Jae-Min

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy;Applied Physics Letters;2007-07-09

2. Optimization of electric properties of high-k zirconium dioxide by varying deposition and annealing conditions;Materials Science in Semiconductor Processing;2006-12

3. Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy;Microelectronic Engineering;2006-11

4. Chemical surface passivation of HfO2films in a ZnO nanowire transistor;Nanotechnology;2006-03-28

5. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy;Applied Physics Letters;2005-03-07

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