Low cost spinner for semiconductor surface preparation prior to MBE growth
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.571005
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Morphology of GaAs and InP (001) Substrates after Different Preparation Procedures Prior to Epitaxial Growth;Journal of The Electrochemical Society;1988-02-01
2. Molecular‐beam‐epitaxy GaAs regrowth with clean interfaces by arsenic passivation;Journal of Applied Physics;1985-03-15
3. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy;Journal of Applied Physics;1985-03-15
4. Heating effects on GaAs substrate surfaces during the mounting process in the molecular beam epitaxy technique;Thin Solid Films;1984-12
5. Comparative LEED studies of AlxGa1−xAs(110) and GaAs(110)–Al(ϑ);Journal of Vacuum Science and Technology;1982-07
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