Thermal stability of GeSbTe thin films deposited by layer-by-layer metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Thermal stability of GeSbTe thin films deposited by layer-by-layer metalorganic chemical vapor deposition

Published:2009 Issue:6 Volume:27 Page:L54
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ahn Jun-Ku,Park Kyoung-Woo,Seong Nak-Jin,Yoon Soon-Gil

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring charge transfer and schottky barrier modulation at monolayer Ge₂Sb₂Te₅-metal interfaces;Journal of Physics: Condensed Matter;2024-09-13

2. Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5(GST);Zeitschrift für anorganische und allgemeine Chemie;2017-08-29

3. Temperature-dependent phase separation during annealing of Ge2Sb2Te5 thin films in vacuum;Applied Surface Science;2012-06

4. Phase and thickness dependent modulus of Ge2Sb2Te5 films down to 25 nm thickness;Applied Physics Letters;2012-04-16

5. Layer-by-layer self-assembly and electrochemistry: Applications in biosensing and bioelectronics;Biosensors and Bioelectronics;2012-01

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