Growth of InxGa1−xN and InxAl1−xN on GaAs metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of InxGa1−xN and InxAl1−xN on GaAs metalorganic molecular beam epitaxy

Published:1995-05 Issue:3 Volume:13 Page:716-718
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Abernathy C. R.,MacKenzie J. D.,Bharatan S. R.,Jones K. S.,Pearton S. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579813

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity;Applied Physics Letters;2017-02-13

2. Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN;Physical Review B;2014-09-25

3. Structural and electrical properties of AlxIn1-xN (0.10≤x≤0.94) films grown on sapphire substrates;Journal of Materials Research;2010-09

4. Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications;SPIE Proceedings;2010-02-11

5. The effect of AlN buffer layer on properties of AlxIn1−xN films on glass substrates;Thin Solid Films;2009-04

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