Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma-Reference-Cited by-同舟云学术

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Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

Published:2008-03 Issue:2 Volume:26 Page:205-211
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Min Nam-Ki,Efremov Alexander,Kim Yun-Ho,Kim Mansu,Park Hyung-Ho,Lee Hyun Woo,Kwon Kwang-Ho

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2831502

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma;Current Applied Physics;2023-01

2. Review on recent progress in patterning phase change materials;Journal of Vacuum Science & Technology A;2020-12

3. Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories;RSC Advances;2020

4. 3D cross-point phase-change memory for storage-class memory;Journal of Physics D: Applied Physics;2019-09-09

5. What Will Come After V‐NAND—Vertical Resistive Switching Memory?;Advanced Electronic Materials;2019-02-28

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