Investigation of Ta∕Ti∕Al∕Ni∕Au ohmic contact to AlGaN∕GaN heterostructure field-effect transistor-Reference-Cited by-同舟云学术

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Investigation of Ta∕Ti∕Al∕Ni∕Au ohmic contact to AlGaN∕GaN heterostructure field-effect transistor

Published:2005 Issue:1 Volume:23 Page:322
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Ki Hong,Jeon Chang Min,Oh Sang Ho,Lee Jong-Lam,Park Chan Gyung,Lee Jung Hee,Lee Kyu Seok,Koo Yang Mo

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Specific Contact Resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate;IEEE Transactions on Electron Devices;2022-10

2. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures;Semiconductor Science and Technology;2022-04-13

3. Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon;IEEE Transactions on Electron Devices;2022-03

4. Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices;AIP Advances;2021-11-01

5. Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon;IEEE Electron Device Letters;2021-04

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