In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si:H films using real-time spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si:H films using real-time spectroscopic ellipsometry

Published:2003-07 Issue:4 Volume:21 Page:1545-1549
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Levi D. H.,Nelson B. P.,Perkins J. D.,Moutinho H. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1564037

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of light scattering from self-affine surfaces: Relationship between surface morphology and effective medium roughness;Physical Review B;2011-08-18

2. On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates;Applied Physics Letters;2009-07-13

3. Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry;Thin Solid Films;2006-04

4. The role of the silyl radical in plasma deposition of microcrystalline silicon;Journal of Applied Physics;2004-10-15

5. In-situ Observation of Silicon Epitaxy Breakdown with Real-Time Spectroscopic Ellipsometry;MRS Proceedings;2004

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