Scanning anode field emission microscopy of a single Si emitter

Abstract

Emitter tip radius nonuniformity results in exponential variations in emission current and a relatively low array utilization. Here, we provide a method of mapping the current and field-factor from a single emitter over a small area using a scanning anode field emission microscope. A dull W probe is used as the anode, and an array of emitters is fabricated on silicon (Si) wafers. We use a relatively wide spaced (100 [Formula: see text]m pitch) emitter array with each emitter having an integrated Si pillar. Current-voltage characteristics are used to extract the field-factor and to experimentally demonstrate the mapping of the currents and field-factor of a single emitter. From emission spot sizes, the emission half-angles are measured to be [Formula: see text] at anode voltages 2.5 kV and a minimum resolvable feature of 2–3 [Formula: see text]m at 1.8 kV. We also determine the field-factor dependence with the distance between the anode and the emitter, where limiting the current becomes essential to prevent early burn-out of the emitter that could reduce the current. We also simulated the maximum currents tolerated by the pillar to assess the thermal effects on the emitter. Finite element modeling confirms the experimental trend in the field-factor with the distance between the anode and the emitter tip, resulting in a value of approximately [Formula: see text] cm[Formula: see text] for an emitter tip radius of 5 nm and an emitter-anode distance of 50 [Formula: see text]m.