Leakage current and charge trapping behavior in TiO[sub 2]∕SiO[sub 2] high-κ gate dielectric stack on 4H-SiC substrate-Reference-Cited by-同舟云学术

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Leakage current and charge trapping behavior in TiO[sub 2]∕SiO[sub 2] high-κ gate dielectric stack on 4H-SiC substrate

Published:2007 Issue:1 Volume:25 Page:217
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Mahapatra R.,Chakraborty Amit K.,Poolamai N.,Horsfall A.,Chattopadhyay S.,Wright N. G.,Coleman Karl S.,Coleman P. G.,Burrows C. P.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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