Silicon nanostructures with very large negatively tapered profile by inductively coupled plasma-RIE-Reference-Cited by-同舟云学术

Silicon nanostructures with very large negatively tapered profile by inductively coupled plasma-RIE

Published:2016-11 Issue:6 Volume:34 Page:06KD01
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Ayari-Kanoun Asma¹,Aydinoglu Ferhat¹,Cui Bo¹,Saffih Faycal²

Affiliation:

1. Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave. West, Waterloo, Ontario N2L 3G1, Canada

2. Department of Electrical Engineering, United Arab Emirates University, P.O. Box 15551, Al Ain, United Arab Emirates

Funder

Canada Foundation for Innovation (CFI)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4964402

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