Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production-Reference-Cited by-同舟云学术

Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production

Published:2010-05 Issue:3 Volume:28 Page:C3B12-C3B16
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Novikov S. V.,Staddon C. R.,Foxon C. T.,Yu K. M.,Broesler R.,Hawkridge M.,Liliental-Weber Z.,Walukiewicz W.,Denlinger J.,Demchenko I.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3368600

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE;Crystal Growth & Design;2024-05-07

2. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters;Applied Physics Reviews;2020-12

3. Impact of lattice defects on water oxidation properties in SnNb2O6 photoanode prepared by pulsed-laser deposition method;Journal of Applied Physics;2019-09-07

4. Temperature dependence of photoinduced hydrogen production and simultaneous separation in TiO2 nanotubes/palladium bilayer membrane;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-07

5. Partially polycrystalline GaN1−xAsxalloys grown on GaAs in the middle composition range achieving a smaller band gap;Japanese Journal of Applied Physics;2017-07-11