Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells-Reference-Cited by-同舟云学术

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Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN∕GaAs single quantum wells

Published:2006-07 Issue:4 Volume:24 Page:1223-1227
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lai Fang-I,Kuo S. Y.,Wang J. S.,Kuo H. C.,Wang S. C.,Wang H. S.,Liang C. T.,Chen Y. F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2208996

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