Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation-Reference-Cited by-同舟云学术

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Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Published:2008-11 Issue:6 Volume:26 Page:1887-1891
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Khan M. Ziaur Rahman¹,Hasko D. G.¹,Saifullah M. S. M.²,Welland M. E.¹

Affiliation:

1. Nanoscience Centre, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FF, United Kingdom

2. Patterning and Fabrication Capability Group, Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 3 Research Link, Singapore 117602, Singapore

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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