Properties of the silicon–SiO2 interface-Reference-Cited by-同舟云学术

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Properties of the silicon–SiO2 interface

Published:1977-09 Issue:5 Volume:14 Page:1106-1111
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Williams Richard

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.569342

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics;Applied Physics Letters;2014-03-10

2. Noncontact interface trap determination of SiO2–4H–SiC structures;Journal of Applied Physics;2010-01

3. Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures;Semiconductors;2008-01

4. Antireflection Layer Coatings on the Si Solar Cell Using SiO₂ and Si₃N₄;Materials Science Forum;2004-03

5. Electron confinement and optical enhancement inSi/SiO2superlattices;Physical Review B;2001-10-29

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