Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films-Reference-Cited by-同舟云学术

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Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films

Published:2003 Issue:2 Volume:21 Page:804
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Soo-Hyun,Nam Ki Tae,Datta Arindom,Kim Hyun-Mi,Kim Ki-Bum,Kang Dae-Hwan

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tensile and compressive stresses in Cu/W multilayers: Correlation with microstructure, thermal stability, and thermal conductivity;Acta Materialia;2022-11

2. Effect of internal stress on short-circuit diffusion in thin films and nanolaminates: Application to Cu/W nano-multilayers;Applied Surface Science;2020-04

3. The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization;Applied Surface Science;2015-02

4. Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect;Journal of Materials Chemistry C;2015

5. Graphene as an atomically thin barrier to Cu diffusion into Si;Nanoscale;2014

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