Graphene as an atomically thin barrier to Cu diffusion into Si-Reference-Cited by-同舟云学术

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Graphene as an atomically thin barrier to Cu diffusion into Si

Published:2014 Issue:13 Volume:6 Page:7503-7511
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hong Juree¹²³⁴,Lee Sanggeun¹²³⁴,Lee Seulah¹²³⁴,Han Heetak¹²³⁴,Mahata Chandreswar¹²³⁴,Yeon Han-Wool⁵⁶⁷⁸,Koo Bonwoong⁹¹⁰⁷⁴,Kim Seong-Il⁹¹⁰⁷⁴,Nam Taewook¹¹²³¹²,Byun Kisik¹³²³¹²,Min Byung-Wook¹³²³¹²,Kim Young-Woon⁹¹⁰⁷⁴,Kim Hyungjun¹¹²³¹²,Joo Young-Chang⁵⁶⁷⁸,Lee Taeyoon¹²³⁴

Affiliation:

1. Nanobio Device Laboratory

2. School of Electrical and Electronic Engineering

3. Yonsei University

4. Seoul, Republic of Korea

5. Nanodevice Materials Laboratory

6. Department of Materials Science & Engineering

7. Seoul National University

8. Seoul 151-744, Republic of Korea

9. In situ Electron Microscopy Laboratory

10. Department of Materials Science and Engineering

11. Nanodevice Laboratory

12. Seoul 120-749, Republic of Korea

13. Microwave Integrated Circuits and Systems Laboratory

Abstract

We investigate the ability of both single-layer and multilayer graphene grown by chemical vapor deposition (CVD) to act as Cu diffusion barriers.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR06771H

Reference63 articles.

1. Formation of Ti diffusion barrier layers in Thin Cu(Ti) alloy films

2. Copper-Silver Alloy for Advanced Barrierless Metallization

3. In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects

4. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures

5. Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle Process

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4. Improved Stability of Graphene-Coated CMOS ISFETs for Biosensing;IEEE Transactions on Biomedical Circuits and Systems;2023-12

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