Etching of polysilicon in inductively coupled Cl[sub 2] and HBr discharges. IV. Calculation of feature charging in profile evolution-Reference-Cited by-同舟云学术

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Etching of polysilicon in inductively coupled Cl[sub 2] and HBr discharges. IV. Calculation of feature charging in profile evolution

Published:2002 Issue:3 Volume:20 Page:1084
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Mahorowala Arpan P.,Sawin Herbert H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Time-dependent measurement of charge density on the bottom of high aspect capillary hole in pulse-modulated VHF capacitively coupled Ar plasma;Japanese Journal of Applied Physics;2020-12-18

4. Multiscale modeling and neural network model based control of a plasma etch process;Chemical Engineering Research and Design;2020-12

5. Evaluation of absolute charge density at the bottom of high aspect capillary holes exposed to a pulsed very high frequency plasma;Japanese Journal of Applied Physics;2020-04-27

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