ScAlN etch mask for highly selective silicon etching-Reference-Cited by-同舟云学术

ScAlN etch mask for highly selective silicon etching

Published:2017-09 Issue:5 Volume:35 Page:052001
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

David Henry Michael¹,Young Travis R.¹,Griffin Ben¹

Affiliation:

1. Sandia National Labs, MESA Fabrication Facility, P.O. Box 5800 MS 1084, Albuquerque, New Mexico 87185-1084

Funder

Sandia National Laboratories (Sandia)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4994841

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