Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates-Reference-Cited by-同舟云学术

Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

Published:2005 Issue:3 Volume:23 Page:1190
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Storm D. F.,Katzer D. S.,Mittereder J. A.,Binari S. C.,Shanabrook B. V.,Zhou Lin,Smith David J.,Xu X.,McVey D.,Vaudo R. P.,Brandes G. R.

Publisher

American Vacuum Society

Subject

General Engineering

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