AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN
Author:
Affiliation:
1. Electronics Science and Technology Division, Code 6852, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
2. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210
Funder
Office of Naval Research (ONR)
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://avs.scitation.org/doi/am-pdf/10.1116/1.4977779
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2023-07
2. Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures;Energies;2021-10-14
3. 1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate;Applied Physics Letters;2021-10-11
4. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire;Journal of Vacuum Science & Technology B;2020-05
5. III-nitrides based resonant tunneling diodes;Journal of Physics D: Applied Physics;2020-04-26
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