Bi thin film growth structures prepared at 30 K on GaAs(110) and InP(110)-Reference-Cited by-同舟云学术

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Bi thin film growth structures prepared at 30 K on GaAs(110) and InP(110)

Published:1993-07 Issue:4 Volume:11 Page:2073-2077
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Patrin J. C.,Li Y. Z.,Chander M.,Weaver J. H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578412

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cancellation of electron and hole contributions to the Hall effect in ultrathin Bi films grown on GaAs(110);Physical Review B;2022-05-31

2. Quantum size effects in Bi films grown on GaAs (110);Journal of Applied Physics;2008-12-15

3. Fe films grown on GaAs(110) in a two-step process: Improved structural and magnetic properties;Applied Physics Letters;2008-05-12

4. Melting and solidification study of as-deposited and recrystallized Bi thin films;Journal of Applied Physics;2006-06-15

5. Surface modifications induced by bismuth on (001) GaAs surfaces;Journal of Crystal Growth;2005-04

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