Affiliation:
1. Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russian Federation
Abstract
The work addresses the question of the field-dependence of the notional emission area for a field-emitter tip using computer simulation and experimental data. Based on finite-element method calculations, it was determined that for single field emitters having a given shape, there is a stable and characteristic shift of the degree of voltage in the pre-exponential voltage exponent of the field emission equation relative to the “planar” case. A power-law fit to the 3D-data was applied so as to use it in the analysis of the current-voltage data using a k-power plot (KP-plot) of semilogarithmic type. A comparison of effective emission parameters obtained from the model current-voltage characteristic with the classical Fowler–Nordheim plot, modern Murphy–Good plot, and new KP-plot is carried out. The KP-plot is subsequently used to analyze the experimental data of Tungsten emitters having a scanning emission microscope determined apex radius. The new semilogarithmic analysis reveals that the apex radius of curvature is within the observed range.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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