Dependence on ionicity of the (110) surface relaxations of zinc-blende semiconductors-Reference-Cited by-同舟云学术

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Dependence on ionicity of the (110) surface relaxations of zinc-blende semiconductors

Published:1987-07 Issue:4 Volume:5 Page:953
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kasowski R. V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical LEED parameters for the zinc-blende GaN (110) surface;Materials Science and Engineering: B;1999-05

2. Low-energy positron diffraction from CdTe(110):mA minimum-variance R-factor analysis;Physical Review B;1997-03-15

3. Determination of the atomic geometries of the (110) surfaces of CuCl and CuBr by dynamical low-energy electron diffraction intensity analysis;Physical Review B;1996-11-15

4. Surface electronic properties of ZnS, ZnSe and ZnTe(110);Surface Science;1994-04

5. Calculated atomic structures of ZnS, ZnSe and ZnTe (110) surfaces;Solid State Communications;1993-09

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