Microstructural analysis of Ti/Al/Ti/Au ohmic contacts ton-AlGaN/GaN-Reference-Cited by-同舟云学术

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Microstructural analysis of Ti/Al/Ti/Au ohmic contacts ton-AlGaN/GaN

Published:2002-05 Issue:3 Volume:20 Page:1004-1010
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Chen J.,Ivey D. G.,Bardwell J.,Liu Y.,Tang H.,Webb J. B.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1472428

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of Ti/Al and Ti/Al/Ti/Au ohmic contacts to AlGaN/GaN heterostructures;Materials Letters;2024-12

2. Ohmic Contact Characteristic of Ti/Al/Ni/Au on AlGaN;2019 20th International Conference on Electronic Packaging Technology(ICEPT);2019-08

3. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing;Chinese Physics B;2019-03

4. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts;Microelectronics Reliability;2017-03

5. The role of the Ti and Mo barrier layer in Ti/Al metallization to AlGaN/GaN heterostructures at identical process conditions: a structural and chemical characterization;Semiconductor Science and Technology;2015-10-09

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