Ohmic Contact Characteristic of Ti/Al/Ni/Au on AlGaN-Reference-Cited by-同舟云学术

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Ohmic Contact Characteristic of Ti/Al/Ni/Au on AlGaN

Published:2019-08 Issue: Volume: Page:
ISSN:
Container-title:2019 20th International Conference on Electronic Packaging Technology(ICEPT)
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Author:

Li Ling,Zhang Libing,Sun Yalun,Wang Yifang,Gan ZhiYing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9075848/9080910/09081208.pdf?arnumber=9081208

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors;Electronics;2024-07-15

2. Investigation on Effect of Fillets on the Characteristics of Relay Electrical Contacts;Arabian Journal for Science and Engineering;2024-03-26

3. Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer;IEEE Transactions on Electron Devices;2023-04

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