Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Author:

You Hsin-Chiang,Wu Chi-Chang,Ko Fu-Hsiang,Lei Tan-Fu,Yang Wen-Luh

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics;IEEE Transactions on Electron Devices;2021-03

2. Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory;International Journal of Electrochemical Science;2015-08

3. A hot hole-programmed and low-temperature-formed SONOS flash memory;Nanoscale Research Letters;2013-07-31

4. Plasma-Enhanced Storage Capability of SONOS Flash Memory;International Journal of Electrochemical Science;2013-05

5. A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory;IEEE Electron Device Letters;2012-10

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