Characteristics of HfO[sub 2] thin films deposited by plasma-enhanced atomic layer deposition using O[sub 2] plasma and N[sub 2]O plasma-Reference-Cited by-同舟云学术

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Characteristics of HfO[sub 2] thin films deposited by plasma-enhanced atomic layer deposition using O[sub 2] plasma and N[sub 2]O plasma

Published:2006 Issue:3 Volume:24 Page:1088
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Seokhoon,Kim Jinwoo,Choi Jihoon,Kang Hyunseok,Jeon Hyeongtag,Bae Choelhwyi

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Cage effect of film mesoscopic structure on activation of TiZrHfV non-evaporable getter;Vacuum;2024-04

4. Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability;ACS Applied Materials & Interfaces;2023-06-23

5. Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition;Nanomaterials;2022-12-29

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