Compositional characterization of very thin SiO2/Si3N4/SiO2 stacked films by x-ray photoemission spectroscopy and time-of-flight-secondary-ion-mass spectroscopy techniques-Reference-Cited by-同舟云学术

Compositional characterization of very thin SiO2/Si3N4/SiO2 stacked films by x-ray photoemission spectroscopy and time-of-flight-secondary-ion-mass spectroscopy techniques

Published:1997-05 Issue:3 Volume:15 Page:905-910
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Santucci S.,Lozzi L.,Ottaviano L.,Passacantando M.,Picozzi P.,Moccia G.,Alfonsetti R.,Di Giacomo A.,Fiorani P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580730

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1. Nitrogen diffusion and accumulation at the Si∕SiO[sub 2] interface in SiO[sub 2]∕Si[sub 3]N[sub 4]∕SiO[sub 2] structures for nonvolatile semiconductor memories;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

2. Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon;Journal of The Electrochemical Society;2004

3. Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide–nitride-oxide stacks;Applied Physics Letters;2003-08-25

4. Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2;Journal of Non-Crystalline Solids;1999-04

5. Atomic Spectrometry Update–Atomic mass spectrometry;Journal of Analytical Atomic Spectrometry;1998