Innovative remote plasma source for atomic layer deposition for GaN devices-Reference-Cited by-同舟云学术

Innovative remote plasma source for atomic layer deposition for GaN devices

Published:2021-12 Issue:6 Volume:39 Page:062403
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Knoops Harm C. M.¹²^ORCID,Arts Karsten²^ORCID,Buiter Jan W.²,Martini Luca Matteo²^ORCID,Engeln Richard²^ORCID,Hemakumara Dilini Tania¹³,Powell Michael¹,Kessels Wilhelmus M. M. (Erwin)²^ORCID,Hodson Chris J.¹,O’Mahony Aileen¹

Affiliation:

1. Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP, United Kingdom

2. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

3. James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001318

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development and Evaluation of Ferrite Core Inductively Coupled Plasma Radio Frequency Ion Source for High-Current Ion Implanters in Semiconductor Applications;Sensors;2024-08-05

2. Transformer coupled toroidal wave-heated remote plasma sources operating in Ar/NF₃ mixtures;Journal of Physics D: Applied Physics;2024-08-02

3. Remote inductively coupled plasmas in Ar/N2 mixtures and implications for plasma enhanced ALD;Journal of Vacuum Science & Technology A;2024-04-10

4. Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS₂ Thin Films at 150 °C;ACS Applied Materials & Interfaces;2023-07-17

5. Plasma Surface Modification of 3Y-TZP at Low and Atmospheric Pressures with Different Treatment Times;International Journal of Molecular Sciences;2023-04-21