Enhancement of carrier concentration and spatial confinement in molecular-beam epitaxial Si and Be δ-doped GaAs by increasing As4/As2 flux ratio-Reference-Cited by-同舟云学术

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Enhancement of carrier concentration and spatial confinement in molecular-beam epitaxial Si and Be δ-doped GaAs by increasing As4/As2 flux ratio

Published:1992-03 Issue:2 Volume:10 Page:863
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Shih Y. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy;Japanese Journal of Applied Physics;2001-02-15

2. Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2000-08-01

3. Confinement of high Be doping levels in AlInAs/GaInAsnpnheterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth;Applied Physics Letters;1993-09-06

4. Effects of As flux on Si δ-doped GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05

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