Profile evolution simulator for sputtering and ion-enhanced chemical etching
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.3054134
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling of microtrenching and bowing effects in nanoscale Si inductively coupled plasma etching process;Journal of Vacuum Science & Technology A;2023-11-08
2. Angular distribution measurement of high-energy argon neutral and ion in a 13.56 MHz capacitively-coupled plasma;Applied Physics Express;2021-11-10
3. The Influence of Process Parameters on the Morphological Characteristics by Directional Etching for Materials Nanoarchitectonics;Journal of Nanoscience and Nanotechnology;2020-05-01
4. Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas;Journal of Vacuum Science & Technology A;2019-09
5. Simulation of profile evolution in HgCdTe ion beam etching by the level set method;J INFRARED MILLIM W;2019
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