Aperture-edge scattering in MeV ion-beam lithography. II. Scattering from a rectangular aperture

Author:

Gorelick S.,Sajavaara T.,Whitlow Harry J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improved 2D continuously variable output couplers for an exit pupil expander fabricated through ion beam etching;Applied Optics;2020-07-10

2. Resolution considerations in MeV ion microscopy and lithography;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-04

3. Review on stretchable and flexible inorganic electronics;Acta Physica Sinica;2014

4. Application of stencil masks for ion beam lithographic patterning;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

5. Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

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