Photoresponsivity of ZnO Schottky barrier diodes-Reference-Cited by-同舟云学术

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Photoresponsivity of ZnO Schottky barrier diodes

Published:2006 Issue:3 Volume:24 Page:1595
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Oh D. C.,Suzuki T.,Hanada T.,Yao T.,Makino H.,Ko H. J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes;Journal of Physics D: Applied Physics;2023-02-16

2. Effect of annealing temperature on response time of ZnO photoconductor fabricated using thermal evaporation technique;Physica Scripta;2022-10-07

3. A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors;Johnson Matthey Technology Review;2020-04-01

4. Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte;Applied Physics A;2016-03-07

5. Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes;Journal of Alloys and Compounds;2015-05

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