Chemical analysis of a Cl2/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions-Reference-Cited by-同舟云学术

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Chemical analysis of a Cl2/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions

Published:1995-09 Issue:5 Volume:13 Page:2022
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Daleiden J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03

2. Development of chemically assisted etching method for GaAs-based optoelectronic devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-03

3. Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology;Applied Physics B;2003-07

4. Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl2/Ar plasma;Materials Science in Semiconductor Processing;2000-06

5. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000

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