Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3-Reference-Cited by-同舟云学术

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Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

Published:2014-05 Issue:3 Volume:32 Page:031510
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Byongju,Jang Hyunchul,Kim Sun-Wook,Byeon Dae-Seop,Koo Sangmo,Song Jason S.,Ko Dae-Hong

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4870817

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing;Applied Physics Express;2021-01-12

2. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-11

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