Author:
Current M. I.,Foad M. A.,Murrell A. J.,Collart E. J. H.,de Cock G.,Jennings D.
Cited by
4 articles.
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1. The effects of energy non-monochromaticity of 11B ion beams on 11B diffusion;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
2. Boron diffusion in silicon: the anomalies and control by point defect engineering;Materials Science and Engineering: R: Reports;2003-11
3. Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Control of wafer charging during ion implantation: Issues, monitors and models;2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)