Study of process parameters and characteristics properties of W coatings deposited by rf plasma sputtering

Author:

Vassallo Espedito1ORCID,Pedroni Matteo1ORCID,Aloisio Marco1ORCID,Minelli Daniele1ORCID,Nardone Antonio1ORCID,Chen Hao2345ORCID,Pietralunga Silvia Maria45ORCID,Stinchelli Andrea46ORCID,Di Fonzo Fabio4ORCID

Affiliation:

1. CNR, Institute for Plasma Science and Technology 1 , Via R. Cozzi 53, Milan 20125, Italy

2. Physics Department, Politecnico di Milano 2 P.zza Leonardo da Vinci 32, Milan 20133, Italy

3. , 2 P.zza Leonardo da Vinci 32, Milan 20133, Italy

4. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia 3 , Via Rubattino 81, Milan 20134, Italy

5. CNR, Institute for Photonics and Nanotechnologies 4 , P.zza Leonardo da Vinci 32, Milan 20133, Italy

6. Energy Department, Politecnico di Milano 5 , Via Ponzio 34/3, Milano 20133, Italy

Abstract

Tungsten coatings were deposited on silicon substrates by radio frequency (rf) magnetron sputtering from a metallic target in Ar atmosphere. The process parameters during the sputtering process were evaluated by a Langmuir probe, particularly, the electron density and electron temperature were measured by changing the rf power and gas pressure. The morphological and structural properties of the coatings were studied as a function of the pressure. Significant correlations were found between process parameters and characteristics properties of W coatings. The influence of deposition parameters on electrical properties was investigated. The electrical resistivity of the coatings was increased from 1.3 × 10−6 to 3 × 10−5 Ω m as the pressure increased as well.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

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