10 nm Si pillars fabricated using electron-beam lithography, reactive ion etching, and HF etching-Reference-Cited by-同舟云学术

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10 nm Si pillars fabricated using electron-beam lithography, reactive ion etching, and HF etching

Published:1993-11 Issue:6 Volume:11 Page:2524
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Fischer Paul B.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Emergence of Nanowires;Nanowires;2016

3. Fabrication of ultrahigh density metal–cell–metal crossbar memory devices with only two cycles of lithography and dry-etch procedures;Nanotechnology;2013-05-20

4. High aspect ratio silicon and polyimide nanopillars by combination of nanosphere lithography and intermediate mask pattern transfer;Microelectronic Engineering;2012-11

5. Room-Temperature Observation of Size Effects in Photoluminescence of Si$_{0.8}$Ge$_{0.2}$/Si Nanocolumns Prepared by Neutral Beam Etching;Applied Physics Express;2012-07-19

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