Effects of SiO[sub 2]∕Si[sub 3]N[sub 4] hard masks on etching properties of metal gates-Reference-Cited by-同舟云学术

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Effects of SiO[sub 2]∕Si[sub 3]N[sub 4] hard masks on etching properties of metal gates

Published:2006 Issue:6 Volume:24 Page:2689
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hwang Wan Sik,Cho Byung-Jin,Chan Daniel S. H.,Bliznetsov Vladimir,Yoo Won Jong

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

2. Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method;Japanese Journal of Applied Physics;2023-03-27

3. Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding;Coatings;2020-12-22

4. Optical and electrical characterization methods of plasma-induced damage in silicon nitride films;Japanese Journal of Applied Physics;2018-05-29

5. Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts;Semiconductors;2017-12

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