Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers-Reference-Cited by-同舟云学术

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Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers

Published:2007 Issue:3 Volume:25 Page:1083
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Li W.,Shao H.,Moscicka D.,Torfi A.,Wang W. I.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fine modulation of the energy band strategy to control the carrier confinement capability of digital alloys;Nanotechnology;2022-11-04

2. 2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers;Superlattices and Microstructures;2019-06

3. Crystallographic orientation-dependent optical properties of GaInSb mid-infrared quantum well laser;Optik;2012-11

4. DESIGN OF ASYMMETRIC GEAR AND ACCURATE BENDING STRESS ANALYSIS USING THE ES-PIM WITH TRIANGULAR MESH;International Journal of Computational Methods;2011-11-20

5. Numerical study on optical and electrical properties of strained GaInSb/GaInAlSb mid-infrared quantum well laser;Optical and Quantum Electronics;2010-03

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