Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates-Reference-Cited by-同舟云学术

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Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates

Published:1989-05 Issue:3 Volume:7 Page:1130-1135
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Posthill J. B.,Rudder R. A.,Hattangady S. V.,Fountain G. G.,Vitkavage D. J.,Markunas R. J.,Parikh N. R.,Yu N.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576241

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals;Applied Physics Letters;2008-03-10

2. Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride;Journal of Applied Physics;2001-12-15

3. Amorphous silicon, amorphous carbon and amorphous silicon carbide deposited by remote plasma chemical vapor deposition;Thin Solid Films;1992-06

4. Process compatibility in integrated processing of semiconductor devices in multichamber systems;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-05

5. Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition;Thin Film Processes;1991

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